Magneto-optical studies of n-GaAs under high hydrostatic pressureWASILEWSKI, Z; STRADLING, R. A.Semiconductor science and technology. 1986, Vol 1, Num 4, pp 264-274, issn 0268-1242Article

Far infrared magneto-optics of InAs_1-xP_x alloys under hydrostatic pressureSOTOMAYOR TORRES, C. M; STRADLING, R. A.Semiconductor science and technology. 1987, Vol 2, Num 6, pp 323-328, issn 0268-1242Article

Comments on the identification of high-order spectral lines of donors in semiconductors in intermediate magnetic fieldsARMISTEAD, C. J; STRADLING, R. A; WASILEWSKI, Z et al.Semiconductor science and technology. 1989, Vol 4, Num 7, pp 557-564, issn 0268-1242, 8 p.Article

High pressure cell for magneto-optical experimentsWASILEWSKI, Z; POROWSKI, S; STRADLING, R. A et al.Journal of physics. E. Scientific instruments. 1986, Vol 19, Num 6, pp 480-482, issn 0022-3735Article

Shubnikov-de Haas measurements in indium antimonideSTAROMLYNSKA, J; FINLAYSON, D. M; STRADLING, R. A et al.Journal of physics. C. Solid state physics. 1983, Vol 16, Num 33, pp 6373-6386, issn 0022-3719Article

Intersubband Raman spectroscopy of two-dimensional electron gases in GaSb/InAs quantum wellsLI, Y. B; STRADLING, R. A; ARTUS, L et al.Semiconductor science and technology. 1996, Vol 11, Num 8, pp 1137-1145, issn 0268-1242Article

Quantum transport in InAs_1-x/InSb strained layer superlatticesTAN LE; NORMAN, A. G; YUEN, W. T et al.Surface science. 1994, Vol 305, Num 1-3, pp 337-342, issn 0039-6028Conference Paper

Interband magneto-optics of InAs_1-xSb_xSMITH, S. N; PHILLIPS, C. C; THOMAS, R. H et al.Semiconductor science and technology. 1992, Vol 7, Num 7, pp 900-906, issn 0268-1242Article

Simple calculation of the Landau levels of narrow-gap semiconductors in the Kane modelASKENAZY, S; WALLACE, P. R; STRADLING, R. A et al.Physics letters. A. 1984, Vol 106, Num 4, pp 184-186, issn 0375-9601Article

Multi phonon emission in InAs quantum wells studied with a free electron laser and high pulsed magnetic fieldsBRADLEY, I. V; MURZYN, P; MURDIN, B. N et al.Journal of luminescence. 2001, Vol 94-95, pp 707-711, issn 0022-2313Conference Paper

Thin, horizontal-plane Hall sensors for read heads in magnetic recordingSOLIN, S. A; STRADLING, R. A; THIO, T et al.Measurement science & technology (Print). 1997, Vol 8, Num 10, pp 1174-1181, issn 0957-0233Article

4-11 μm infrared emission and 300 K light emitting diodes from arsenic-rich InAs_1-xSb_x strained layer superlatticesTANG, P. J. P; PULLIN, M. J; CHUNG, S. J et al.Semiconductor science and technology. 1995, Vol 10, Num 8, pp 1177-1180, issn 0268-1242Article

Observation of coupled LO phonon-intersubband plasmon modes in GaSb/InAs quantum wells by resonant Raman scatteringLI, Y. B; TSOUKALA, V; STRADLING, R. A et al.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2205-2209, issn 0268-1242Article

Reflection high-energy electron diffraction and optical measurements on the molecular-beam epitaxial growth of one and two monolayers of InAs on GaAsDOSANJH, S. S; DAWSON, P; FAHY, M. R et al.Journal of applied physics. 1992, Vol 71, Num 3, pp 1242-1247, issn 0021-8979Article

High-resolution magneto-optical studies of the donors in InPHOLMES, S. N; WANG, P. D; STRADLING, R. A et al.Semiconductor science and technology. 1990, Vol 5, Num 2, pp 143-149, issn 0268-1242, 7 p.Article

Observation of interfacial plasmons on MBE-grown GaAs by high-resolution electron-energy-loss spectroscopyGRAY-GRYCHOWSKI, Z. J; STRADLING, R. A; EGDELL, R. G et al.Solid state communications. 1986, Vol 59, Num 10, pp 703-706, issn 0038-1098Article

Far-infrared studies at intermediate magnetic fields with the neutral shallow donors in GaAs and InP of transitions not involving the ground stateARMISTEAD, C. J; MAKADO, P. C; NAJDA, S. P et al.Journal of physics. C. Solid state physics. 1986, Vol 19, Num 30, pp 6023-6037, issn 0022-3719Article

Identification of donor impurities in InSb by means of magneto-optical excitation spectraKUCHAR, F; KAPLAN, R; WAGNER, R. J et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 35, pp 6403-6413, issn 0022-3719Article

Identification of germanium and tin in InPSKOLNICK, M. S; DEAN, P. J; TAYLOR, L. L et al.Applied physics letters. 1984, Vol 44, Num 9, pp 881-883, issn 0003-6951Article

High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth processDEBNATH, M. C; ZHANG, T; ROBERTS, C et al.Journal of crystal growth. 2004, Vol 267, Num 1-2, pp 17-21, issn 0022-0248, 5 p.Article

Boundary scattering in wet-etched InAs/GaSb heterostructure wires : with and without magnetic fieldRAHMAN, F; THORNTON, T. J; GALLAGHER, B. L et al.Semiconductor science and technology. 1999, Vol 14, Num 5, pp 478-483, issn 0268-1242Article

Picosecond free-electron laser studies of Auger recombination in arsenic-rich InAs_1-xSb_x strained layer superlattices at 300 KCIESLA, C. M; MURDIN, B. N; PULLIN, M. J et al.IEE proceedings. Optoelectronics. 1997, Vol 144, Num 5, pp 331-335, issn 1350-2433Article

Infrared reflection and transmission of undoped and Si-doped InAs grown on GaAs by molecular beam epitaxyLI, Y. B; STRADLING, R. A; KNIGHT, T et al.Semiconductor science and technology. 1993, Vol 8, Num 1, pp 101-111, issn 0268-1242Article

Raman scattering by plasmon-phonon modes in highly doped n-IsAs grown by molecular beam epitaxyLI, Y. B; FERGUSON, I. T; STRADLING, R. A et al.Semiconductor science and technology. 1992, Vol 7, Num 9, pp 1149-1154, issn 0268-1242Article

High-pressure far-infrared magneto-optical and luminescence studies of electronic states of impurity donors ― D(X) centres ― in high purity GaAsDMOCHOWSKI, J. E; STRADLING, R. A; WANG, P. D et al.Semiconductor science and technology. 1991, Vol 6, Num 6, pp 476-482, issn 0268-1242, 7 p.Article